Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/80846
Title: | Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering | Authors: | Zhang, Zi-Hui Ju, Zhengang Liu, Wei Tan, Swee Tiam Ji, Yun Kyaw, Zabu Zhang, Xueliang Hasanov, Namig Sun, Xiao Wei Demir, Hilmi Volkan |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering | Issue Date: | 2014 | Source: | Zhang, Z.-H., Ju, Z., Liu, W., Tan, S. T., Ji, Y., Kyaw, Z., et al. (2014). Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering. Optics Letters, 39(8), 2483-2486. | Series/Report no.: | Optics letters | Abstract: | The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes have to climb over the energy barrier generated at the p-AlGaN/p-GaN interface before entering the quantum wells. In this work, to address this problem, we report the enhancement of hole injection efficiency by manipulating the hole transport mechanism through insertion of a thin GaN layer of 1 nm into the p-AlGaN EBL and propose an AlGaN/GaN/AlGaN-type EBL outperforming conventional AlGaN EBLs. Here, the position of the inserted thin GaN layer relative to the p-GaN region is found to be the key to enhancing the hole injection efficiency. InGaN/GaN LEDs with the proposed p-type AlGaN/GaN/AlGaN EBL have demonstrated substantially higher optical output power and external quantum efficiency. | URI: | https://hdl.handle.net/10356/80846 http://hdl.handle.net/10220/19562 |
ISSN: | 0146-9592 | DOI: | 10.1364/OL.39.002483 | Schools: | School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences |
Rights: | © 2014 Optical Society of America. | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | EEE Journal Articles SPMS Journal Articles |
SCOPUSTM
Citations
10
42
Updated on Mar 10, 2024
Web of ScienceTM
Citations
10
38
Updated on Oct 25, 2023
Page view(s) 10
791
Updated on Mar 18, 2024
Google ScholarTM
Check
Altmetric
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.