Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/82336
Title: | On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes | Authors: | Zhang, Xueliang Kyaw, Zabu Zhang, Zi-Hui Liu, Wei Tan, Swee Tiam Ju, Zhengang Ji, Yun Hasanov, Namig Zhu, Binbin Lu, Shunpeng Zhang, Yiping Sun, Xiao Wei Demir, Hilmi Volkan |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering | Issue Date: | 2014 | Source: | Zhang, Z. H., Liu, W., Tan, S. T., Ju, Z., Ji, Y., Kyaw, Z., et al. (2014). On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes. Optics Express, 22(S3), A779-A789. | Series/Report no.: | Optics express | Abstract: | Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, detailed mechanisms of how the InGaN EC contributes to the efficiency improvement have remained unclear so far. In this work, we theoretically propose and experimentally demonstrate an electron mean-free-path model, which reveals the InGaN EC reduces the electron mean free path in MQWs, increases the electron capture rate and also reduces the valence band barrier heights of the MQWs, in turn promoting the hole transport into MQWs. | URI: | https://hdl.handle.net/10356/82336 http://hdl.handle.net/10220/19577 |
ISSN: | 1094-4087 | DOI: | 10.1364/OE.22.00A779 | Schools: | School of Electrical and Electronic Engineering | Rights: | © 2014 Optical Society of America. | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | EEE Journal Articles |
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