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|Title:||Influence of substrate heating on hole geometry and spatter area in femtosecond laser drilling of silicon||Authors:||Jiao, Lishi
Moon, Seung Ki
Ng, E. Y. K.
Zheng, H. Y.
Son, H. S.
|Keywords:||DRNTU::Engineering::Mechanical engineering::Kinematics and dynamics of machinery||Issue Date:||2014||Source:||Jiao, L., Moon, S. K., Ng, E. Y. K., Zheng, H. Y., & Son, H. S. (2014). Influence of substrate heating on hole geometry and spatter area in femtosecond laser drilling of silicon. Applied Physics Letters, 104(18), 181902-.||Series/Report no.:||Applied physics letters||Abstract:||The objective of this research is to evaluate the effects of the hole geometry and the spatter area around the drilled hole by femtosecond laser deep drilling on silicon with various temperatures. Deep through holes were produced on single crystal silicon wafer femtosecond laser at elevated temperatures ranging from 300 K to 873 K in a step of 100 K. The laser drilling efficiency is increased by 56% when the temperature is elevated from 300 K to 873 K. The spatter area is found to continuously decrease with increasing substrate temperature. The reason for such changes is discussed based on the enhanced laser energy absorption at the elevated temperature.||URI:||https://hdl.handle.net/10356/100052
|DOI:||http://dx.doi.org/10.1063/1.4875928||Rights:||© 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4875928]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
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