dc.contributor.authorSingh, Ram Sevak
dc.contributor.authorTay, Roland Yingjie
dc.contributor.authorChow, Wai Leong
dc.contributor.authorTsang, Siu Hon
dc.contributor.authorMallick, Govind
dc.contributor.authorTeo, Edwin Hang Tong
dc.date.accessioned2014-06-10T03:03:52Z
dc.date.available2014-06-10T03:03:52Z
dc.date.copyright2014en_US
dc.date.issued2014
dc.identifier.citationSingh, R. S., Tay, R. Y., Chow, W. L., Tsang, S. H., Mallick, G., & Teo, E. H. T. (2014). Band gap effects of hexagonal boron nitride using oxygen plasma. Applied Physics Letters, 104(16), 163101-.en_US
dc.identifier.urihttp://hdl.handle.net/10220/19603
dc.description.abstractTuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesApplied physics lettersen_US
dc.rights© 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4872318].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleBand gap effects of hexagonal boron nitride using oxygen plasmaen_US
dc.typeJournal Article
dc.contributor.researchTemasek Laboratoriesen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.4872318
dc.description.versionPublished versionen_US


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