dc.contributor.authorŠimek, Petr
dc.contributor.authorSofer, Zdeněk
dc.contributor.authorJankovský, Ondřej
dc.contributor.authorSedmidubský, David
dc.contributor.authorPumera, Martin
dc.date.accessioned2014-06-10T07:07:40Z
dc.date.available2014-06-10T07:07:40Z
dc.date.copyright2014en_US
dc.date.issued2014
dc.identifier.citationŠimek, P., Sofer, Z., Jankovský, O., Sedmidubský, D., & Pumera, M. (2014). Oxygen-Free Highly Conductive Graphene Papers. Advanced Functional Materials, 24(31), 4878-4885.en_US
dc.identifier.issn1616-301Xen_US
dc.identifier.urihttp://hdl.handle.net/10220/19630
dc.description.abstractGraphene papers have a potential to overcome the gap from nanoscale graphene to real macroscale applications of graphene. A unique process for preparation of highly conductive graphene thin paper by means of Ar+ ion irradiation of graphene oxide (GO) papers, with carbon/oxygen ratio reduced to 100:1, is presented. The composition of graphene paper in terms of carbon/oxygen ratio and in terms of types of individual oxygen-containing groups is monitored throughout the process. Angle-resolved high resolution X-ray photoelectron spectroscopy helps to investigate the depth profile of carbon and oxygen within reduced GO paper. C/O ratios over 100 on the surface and 40 in bulk material are observed. In order to bring insight to the processes of oxygen removal from GO paper by low energy Ar+ ion bombardment, the gases released during the irradiation are analyzed by mass spectroscopy. It is proven that Ar+ ion beam can be applied as a technique for fabrication of highly reduced graphene papers with high conductivities. Such highly conductive graphene papers have great potential to be used in application for construction of microelectronic and sensor devices.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesAdvanced functional materialsen_US
dc.rights© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_US
dc.subjectDRNTU::Science::Chemistry
dc.titleOxygen-free highly conductive graphene papersen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.identifier.doihttp://dx.doi.org/10.1002/adfm.201304284


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