dc.contributor.authorLi, L.
dc.contributor.authorShan, C. X.
dc.contributor.authorZhang, X. T.
dc.contributor.authorLu, Y. M.
dc.contributor.authorSun, B. D.
dc.contributor.authorMa, X. Z.
dc.contributor.authorJiang, D. L.
dc.contributor.authorWu, T.
dc.identifier.citationLi, L., Shan, C. X., Zhang, X. T., Lu, Y. M., Sun, B. D., Ma, X. Z., et al. (2014). Dominant Factor Determining the Conduction-Type of Nitrogen-Doped ZnO Film. Journal of Nanoscience and Nanotechnology, 14(5), 3813-3816.en_US
dc.description.abstractNitrogen-doped zinc oxide (ZnO) film has been grown by molecular beam epitaxy. The as-grown sample showed p-type conduction with a hole concentration of 3.1×1017 cm−3. After an annealing process in O2 at 600 °C for 30 min, p-type conduction was still remained, and the hole concentration of the film decreased to 6.8×1016 cm−3. Secondary ion mass spectroscopy revealed that the concentration of both nitrogen and hydrogen decreased after the annealing process. It is demonstrated that the intrinsic compensation source has been decreased after the annealing process. Because the variation trend of the hole concentration in the ZnO:N film is opposite to that of hydrogen and intrinsic defects, but in good accordance with nitrogen, the extrinsically substituted nitrogen (NO ) should be the dominant factor that determines the conduction-type of the ZnO:N film.en_US
dc.relation.ispartofseriesJournal of nanoscience and nanotechnologyen_US
dc.rights© 2014 American Scientific Publishers.en_US
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materials
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Semiconductors
dc.titleDominant factor determining the conduction-type of nitrogen-doped ZnO filmen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US

Files in this item


There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record