dc.contributor.authorFedorenko, Yanina G.
dc.contributor.authorHughes, Mark A.
dc.contributor.authorColaux, Julien L.
dc.contributor.authorJeynes, C.
dc.contributor.authorGwilliam, Russell M.
dc.contributor.authorHomewood, Kevin P.
dc.contributor.authorYao, Jin
dc.contributor.authorHewak, Dan W.
dc.contributor.authorLee, Tae-Hoon
dc.contributor.authorElliott, Stephen R.
dc.contributor.authorGholipour, B.
dc.contributor.authorCurry, Richard J.
dc.contributor.editorDigonnet, Michel J. F.*
dc.contributor.editorJiang, Shibin*
dc.date.accessioned2014-06-11T08:08:03Z
dc.date.available2014-06-11T08:08:03Z
dc.date.copyright2014en_US
dc.date.issued2014
dc.identifier.citationFedorenko, Y. G., Hughes, M. A., Colaux, J. L., Jeynes, C., Gwilliam, R. M., Homewood, K. P., et al. (2014). Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation, Proceeding of SPIE 8982, Optical Components and Materials XI, 898213-.en_US
dc.identifier.urihttp://hdl.handle.net/10220/19677
dc.description.abstractDoping of amorphous chalcogenide films of rather dissimilar bonding type and resistivity, namely, Ga-La-S, GeTe, and Ge-Sb-Te by means of ion implantation of bismuth is considered. To characterize defects induced by ionbeam implantation space-charge-limited conduction and capacitance-voltage characteristics of amorphous chalcogenide/silicon heterojunctions are investigated. It is shown that ion implantation introduces substantial defect densities in the films and their interfaces with silicon. This comes along with a gradual decrease in the resistivity and the thermopower coefficient. It is shown that conductivity in GeTe and Ge-Sb-Te films is consistent with the two-type carrier conduction model. It is anticipated that ion implantation renders electrons to become less localized than holes leading to electron conductivity in certain cases as, for example, in GeTe.en_US
dc.language.isoenen_US
dc.rights© 2014 SPIE. This paper was published in Proceeding of SPIE 8982, Optical Components and Materials XI and is made available as an electronic reprint (preprint) with permission of SPIE. The paper can be found at the following official DOI: [http://dx.doi.org/10.1117/12.2037965].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Science
dc.titleElectrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantationen_US
dc.typeConference Paper
dc.contributor.conferenceProceeding of SPIE 8982, Optical Components and Materials XIen_US
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.identifier.doihttp://dx.doi.org/10.1117/12.2037965
dc.description.versionPublished versionen_US


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