Effects of electrode material and configuration on the characteristics of planar resistive switching devices
Peng, H. Y.
Wu, J. C.
Hong, J. H.
Lin, W. N.
Li, Y. Y.
Ding, J. F.
Date of Issue2013
School of Physical and Mathematical Sciences
We report that electrode engineering, particularly tailoring the metal work function, measurement configuration and geometric shape, has significant effects on the bipolar resistive switching (RS) in lateral memory devices based on self-doped SrTiO3 (STO) single crystals. Metals with different work functions (Ti and Pt) and their combinations are used to control the junction transport (either ohmic or Schottky-like). We find that the electric bias is effective in manipulating the concentration of oxygen vacancies at the metal/STO interface, influencing the RS characteristics. Furthermore, we show that the geometric shapes of electrodes (e.g., rectangular, circular, or triangular) affect the electric field distribution at the metal/oxide interface, thus plays an important role in RS. These systematic results suggest that electrode engineering should be deemed as a powerful approach toward controlling and improving the characteristics of RS memories.
© 2013 The Author(s). This paper was published in APL Materials and is made available as an electronic reprint (preprint) with permission of the Author(s). The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.4827597. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.