Integration of TaOx-based resistive-switching element and GaAs diode
Yoon, S. F.
Yeo, Y. C.
Chia, Ching Kean
Dalapati, G. K.
Chi, Dong Zhi
Date of Issue2013
School of Electrical and Electronic Engineering
We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar resistive-switching with an ON/OFF resistance ratio of over 102 within the voltage range 1.1 V–2.0 V. In the low resistance state, a forward-to-reverse current ratio of 60 was obtained at ±1 V.
DRNTU::Engineering::Electrical and electronic engineering
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