Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/79340
Title: | Integration of TaOx-based resistive-switching element and GaAs diode | Authors: | Chi, Dong Zhi Xu, Z. Tong, X. Yoon, S. F. Yeo, Y. C. Dalapati, G. K. Chia, Ching Kean |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering | Issue Date: | 2013 | Source: | Xu, Z., Tong, X., Yoon, S. F., Yeo, Y. C., Chia, C. K., Dalapati, G. K., et al. (2013). Integration of TaOx-based resistive-switching element and GaAs diode. APL Materials, 1(3), 032121-. | Series/Report no.: | APL materials | Abstract: | We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar resistive-switching with an ON/OFF resistance ratio of over 102 within the voltage range 1.1 V–2.0 V. In the low resistance state, a forward-to-reverse current ratio of 60 was obtained at ±1 V. | URI: | https://hdl.handle.net/10356/79340 http://hdl.handle.net/10220/19734 |
ISSN: | 2166-532X | DOI: | 10.1063/1.4820421 | Schools: | School of Electrical and Electronic Engineering | Rights: | © 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Journal Articles |
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Integration of TaOx-based resistive-switching element and GaAs diode.pdf | 853.63 kB | Adobe PDF | View/Open |
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