Uncooled resonant infrared detector based on aluminum nitride piezoelectric film through charge generations and lattice absorptions
Ang, Wan Chia
Randles, A. B.
Gu, Y. A.
Leong, K. C.
Tan, Chuan Seng
Date of Issue2014
School of Electrical and Electronic Engineering
This Letter demonstrates an aluminum nitride (AlN) based uncooled resonant infrared (IR) detector utilizing the photo-sensitive and piezoelectric properties of polycrystalline AlN. The AlN Lamb wave mode resonator is found responsive to IR illuminations by showing a decrease in the S 21 magnitude instead of a resonant frequency shift. A −0.08 dB shift of S 21 magnitude was observed for an IR incident power of 647 nW, which translates to a responsivity of 124 kdB/W. Photoresponse is proposed for the IR sensing mechanism through additional charge carriers generation rather than thermal effects.
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Applied physics letters
© 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.4879024. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.