Leakage current and structural analysis of annealed HfO2/La2O3 and CeO2/La2O3 dielectric stacks : a nanoscopic study
Pey, Kin Leong
Kushvaha, Sunil Singh
O'Shea, Sean Joseph
Date of Issue2014
School of Electrical and Electronic Engineering
Grain boundaries in the polycrystalline microstructure of post-annealed high-κ (HK) dielectrics are a major limitation in the reliability of HK dielectrics used for advanced CMOS technologies. Another challenge in the field of HK dielectrics is to ensure higher drain drive current in CMOS, while maintaining low leakage current. In this work, the authors demonstrate enhanced performance of HfO2 and CeO2 dielectrics by incorporating lanthanum. The resulting stacks show promising dielectric characteristics with reduced leakage current and uniform (amorphous) crystal structure. The improved HK characteristics were shown to occur even over nanometer-length scales using scanning probe microscopy and transmission electron microscopy, in agreement with previous studies based on micron-scale device-level measurement.
DRNTU::Engineering::Electrical and electronic engineering
Journal of vacuum science & technology B: microelectronics and nanometer structures
© 2014 American Vacuum Society. This paper was published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures and is made available as an electronic reprint (preprint) with permission of American Vacuum Society. The paper can be found at the following official DOI: http://dx.doi.org/10.1116/1.4876335. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.