Nonvolatile CBRAM-crossbar-based 3-D-integrated hybrid memory for data retention
Author
Wang, Yuhao
Yu, Hao
Zhang, Wei
Date of Issue
2013School
School of Computer Engineering
School of Electrical and Electronic Engineering
School of Electrical and Electronic Engineering
Version
Accepted version
Abstract
This paper explores the design of 3-D-integrated hybrid memory by conductive-bridge random-access-memory (CBRAM). Considering internal states, height, and radius of the conductive bridge of one CBRAM device, an accurate CBRAM device model is developed for CBRAM-crossbar-based nonvolatile memory design with efficient estimation of area, access time, and power. Based on this design platform, one 3-D-integrated hybrid memory is designed by stacking one tier of CBRAM-crossbar with tiers of static random access memory (SRAM) and dynamic random access memory (DRAM), where the tier of CBRAM-crossbar is deployed for data retention during power gating of SRAM/DRAM tiers. One corresponding block-level data retention is developed to only write back dirty data from SRAM/DRAM to CBRAM-crossbar. When compared with phase-change random-access-memory-based system-level data retention, our design achieves 11× faster data-migration speed and 10× less data-migration power. When compared with ferroelectric random-access-memory-based bit-level data retention, our design also achieves 17× smaller area and 56× smaller power under the same data-migration speed.
Subject
DRNTU::Engineering::Computer science and engineering::Data
Type
Journal Article
Series/Journal Title
IEEE transactions on Very Large Scale Integration (VLSI) Systems
Rights
© 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [DOI: http://dx.doi.org/10.1109/TVLSI.2013.2265754].
Collections
http://dx.doi.org/10.1109/TVLSI.2013.2265754
Get published version (via Digital Object Identifier)