Analysis of correlated gate and drain random telegraph noise in post-soft breakdownTiN/HfLaO/SiOx nMOSFETs
Pey, Kin Leong
Date of Issue2014
School of Electrical and Electronic Engineering
We investigate correlated gate (IG) and drain (ID) random telegraph noise phenomena observed in post breakdown regime on nMOSFET TiN/HfLaO/ SiOx gate-stacks. We observe two different IG-ID correlation patterns (i.e., of the same and opposite polarities) that we attributed to charge trapping into oxygen vacancy traps of different kinds located in the SiOx close to the Si/SiOx interface. Results reported in this letter provide useful information for improving the understanding of IG/ID RTN phenomena and its impact on the reliability of post-SBD nanometer MOSFETs.
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
IEEE Electron Device Letters
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