Semiconductor cavity QED : band gap induced by vacuum fluctuations
Kibis, O. V.
Shelykh, I. A.
Date of Issue2014
School of Physical and Mathematical Sciences
We consider theoretically a semiconductor nanostructure embedded in one-dimensional microcavity and study the modification of its electron energy spectrum by the vacuum fluctuations of the electromagnetic field. To solve the problem, a nonperturbative diagrammatic approach based on the Green's function formalism is developed. It is shown that the interaction of the system with the vacuum fluctuations of the optical cavity opens gaps within the valence band of the semiconductor. The approach is verified for the case of large photon occupation numbers, proving the validity of the model by comparing to previous studies of the semiconductor system excited by a classical electromagnetic field. The developed theory is of general character and allows for unification of quantum and classical descriptions of the strong light-matter interaction in semiconductor structures.
Physical review A
© 2014 American Physical Society. This paper was published in Physical Review A and is made available as an electronic reprint (preprint) with permission of American Physical Society. The paper can be found at the following official DOI: http://dx.doi.org/10.1103/PhysRevA.89.062115. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.