dc.contributor.authorEspinosa-Ortega, T.
dc.contributor.authorKyriienko, O.
dc.contributor.authorKibis, O. V.
dc.contributor.authorShelykh, I. A.
dc.date.accessioned2014-08-14T08:49:42Z
dc.date.available2014-08-14T08:49:42Z
dc.date.copyright2014en_US
dc.date.issued2014
dc.identifier.citationEspinosa-Ortega, T., Kyriienko, O., Kibis, O. V., & Shelykh, I. A. (2014). Semiconductor cavity QED: Band gap induced by vacuum fluctuations. Physical Review A, 89(6), 062115-.en_US
dc.identifier.issn1050-2947en_US
dc.identifier.urihttp://hdl.handle.net/10220/20282
dc.description.abstractWe consider theoretically a semiconductor nanostructure embedded in one-dimensional microcavity and study the modification of its electron energy spectrum by the vacuum fluctuations of the electromagnetic field. To solve the problem, a nonperturbative diagrammatic approach based on the Green's function formalism is developed. It is shown that the interaction of the system with the vacuum fluctuations of the optical cavity opens gaps within the valence band of the semiconductor. The approach is verified for the case of large photon occupation numbers, proving the validity of the model by comparing to previous studies of the semiconductor system excited by a classical electromagnetic field. The developed theory is of general character and allows for unification of quantum and classical descriptions of the strong light-matter interaction in semiconductor structures.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesPhysical review Aen_US
dc.rights© 2014 American Physical Society. This paper was published in Physical Review A and is made available as an electronic reprint (preprint) with permission of American Physical Society. The paper can be found at the following official DOI: http://dx.doi.org/10.1103/PhysRevA.89.062115.  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Science::Physics
dc.titleSemiconductor cavity QED : band gap induced by vacuum fluctuationsen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevA.89.062115
dc.description.versionPublished versionen_US


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