Germanium p-i-n avalanche photodetector fabricated by point defect healing process
Shim, Jae Woo
Kuh, Bong Jin
Kim, Gwang Sik
Baek, Jung Woo
Date of Issue2014
School of Mechanical and Aerospace Engineering
In this Letter, we report Ge p-i-n avalanche photodetectors (APD) with low dark current (sub 1 μA below VR=5 V), low operating voltage (avalanche breakdown voltage=8–13 V), and high multiplication gain (440–680) by exploiting a point defect healing method (between 600°C and 650°C) and optimizing the doping concentration of the intrinsic region (p-type ∼1017 cm−3). In addition, Raman spectroscopy and electrochemical capacitance voltage analyses were performed to investigate the junction interfaces in more detail. This successful demonstration of Ge p-i-n APD with low dark current, low operating voltage, and high gain is promising for low-power and high-sensitivity Ge PD applications.
DRNTU::Engineering::Mechanical engineering::Control engineering
© 2014 Optical Society of America. This paper was published in Optics Letters and is made available as an electronic reprint (preprint) with permission of Optical Society of America. The paper can be found at the following official DOI: [http://dx.doi.org/10.1364/OL.39.004204]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.