Dilute antimonide nitride for long wavelength infrared photodetection
Chen, X. Z.
Jin, Y. J.
Zhang, D. H.
Date of Issue2014
7th International Conference on Low Dimensional Structures and Devices
School of Electrical and Electronic Engineering
InSb1−xNx materials were fabricated by direct nitrogen implantation into InSb wafer and they are characterized by X-ray diffraction, Hall measurement, X-ray photoelectron spectroscopy. In-N bonds are clearly demonstrated and other forms of nitrogen, such as antisites (NIn), interstitial N2 , also exist in the grown films. The ratio to the total nitrogen bonds formed in the materials varies with preparation conditions. The optical bandgap data confirmed bandgap narrowing due to the incorporation of nitrogen. Photoconductive and photovoltaic photodetectors are fabricated and the cut-off frequencies of up to 11.5 μm are demonstrated.
DRNTU::Engineering::Electrical and electronic engineering
© 2014 AIP Publishing LLC. This paper was published in AIP Conference Proceedings of the 7th International Conference on Low Dimensional Structures and Devices and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4878302]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.