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|Title:||Photophysical investigation of charge recombination in CdS/ZnO layers of CuIn(S,Se)2 solar cell||Authors:||Nalla, Venkatram
Ho, John C. W.
Batabyal, Sudip K.
Tok, Alfred Iing Yoong
Wong, Lydia H.
|Keywords:||DRNTU::Science::Physics||Issue Date:||2012||Source:||Nalla, V., Ho, J. C. H., Batabyal, S. K., Wang, Y., Tok, A. I. Y., Sun, H., et al. (2014). Photophysical investigation of charge recombination in CdS/ZnO layers of CuIn(S,Se)2 solar cell. RSC advances, 4(102), 58372-58376.||Series/Report no.:||RSC advances||Abstract:||Excitation wavelength dependent femtosecond transient photocurrents were measured on CuIn(S,Se) 2 solar cell devices, in the range of 330 nm–1300 nm. Below 450 nm wavelength excitations, charge recombination in CdS/ZnO layers is found to be responsible for longer decays and lower EQE. Femtosecond pump-probe measurements also support the charge transfer and recombination in CdS/ZnO layers. These measurements will be helpful to design high efficiency CISSe solar cells, by selecting suitable buffer layers.||URI:||https://hdl.handle.net/10356/100491
|ISSN:||2046-2069||DOI:||http://dx.doi.org/10.1039/C4RA10933C||Rights:||© 2012 The Royal Society of Chemistry. This is the author created version of a work that has been peer reviewed and accepted for publication by RSC Advances, The Royal Society of Chemistry. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1039/C4RA10933C].||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||SPMS Journal Articles|
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