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|Title:||Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack||Authors:||Anand, M. J.
Ng, G. I.
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Electric power||Issue Date:||2013||Source:||Anand, M. J., Ng, G. I., Vicknesh, S., Arulkumaran, S., & Ranjan, K. (2013). Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack. Physica status solidi (c), 10(11), 1421-1425.||Series/Report no.:||Physica status solidi (c)||Abstract:||We have studied the drain current dispersion characteristics of conventional AlGaN/GaN HEMTs and SiN/Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMT) fabricated on silicon substrate. The fabricated MISHEMT exhibited an IDmaxof >1000 mA/mm and gmmax of 241 mS/mm. Compared to conventional AlGaN/GaN HEMTs, about an order of magnitude lower gate leakage current and a ∼ 60% reduction in drain current (ID) collapse was observed in the MISHEMTs. The observation of low ID collapse is due to the occurrence of low interface state density (6.39 × 1010 eV-1 cm-2) between the bilayer dielectric (SiN/Al2O3) and GaN surface which is confirmed through the AC-conductance method.||URI:||https://hdl.handle.net/10356/100484
|ISSN:||1862-6351||DOI:||10.1002/pssc.201300219||Rights:||© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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