dc.contributor.authorPeng, Yuan
dc.contributor.authorZheng, Jianwei
dc.contributor.authorWu, Ping
dc.contributor.authorWang, Junling
dc.identifier.citationPeng, Y., Zheng, J., Wu, P., & Wang, J. (2014). Ab-initio study of donor-acceptor codoping for n-type CuO. Journal of applied physics, 116(16), 163704-.en_US
dc.description.abstractSingle n-type dopant in CuO has either a deep donor level or limited solubility, inefficient in generating free electrons. We have performed ab-initio study of the donor-acceptor codoping to obtain n-type CuO. Our results show that N codoping can slightly improve the donor level of Zr and In by forming shallower n-type complexes (Zr Cu -NO and 2In Cu -NO), but their formation energies are too high to be realized in experiments. However, Li codoping with Al and Ga is found to be relatively easy to achieve. 2Al Cu -Li Cu and 2Ga Cu -Li Cu have shallower donor levels than single Al and Ga by 0.14 eV and 0.08 eV, respectively, and their formation energies are reasonably low to act as efficient codopants. Moreover, Li codoping with both Al and Ga produce an empty impurity band just below the host conduction band minimum, which may reduce the donor ionization energy at high codoping concentrations.en_US
dc.format.extent6 p.en_US
dc.relation.ispartofseriesJournal of applied physicsen_US
dc.rights© 2014 AIP Publishing LLC. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [doi:http://dx.doi.org/10.1063/1.4900495]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.titleAb-initio study of donor-acceptor codoping for n-type CuOen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.description.versionPublished versionen_US

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