dc.contributor.authorLin, Jia Dan
dc.contributor.authorHan, Cheng
dc.contributor.authorWang, Fei
dc.contributor.authorWang, Rui
dc.contributor.authorXiang, Du
dc.contributor.authorQin, Shiqiao
dc.contributor.authorZhang, Xue-Ao
dc.contributor.authorWang, Li
dc.contributor.authorZhang, Hua
dc.contributor.authorWee, Andrew Thye Shen
dc.contributor.authorChen, Wei
dc.date.accessioned2014-12-15T08:03:54Z
dc.date.available2014-12-15T08:03:54Z
dc.date.copyright2014en_US
dc.date.issued2014
dc.identifier.citationLin, J. D., Han, C., Wang, F., Wang, R., Xiang, D., Qin, S., et al. (2014). Electron-doping-enhanced trion formation in monolayer molybdenum disulfide functionalized with cesium carbonate. ACS Nano, 8(5), 5323-5329.en_US
dc.identifier.issn1936-0851en_US
dc.identifier.urihttp://hdl.handle.net/10220/24468
dc.description.abstractWe report effective and stable electron doping of monolayer molybdenum disulfide (MoS2) by cesium carbonate (Cs2CO3) surface functionalization. The electron charge carrier concentration in exfoliated monolayer MoS2 can be increased by about 9 times after Cs2CO3 functionalization. The n-type doping effect was evaluated by in situ transport measurements of MoS2 field-effect transistors (FETs) and further corroborated by in situ ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and Raman scattering measurements. The electron doping enhances the formation of negative trions (i.e., a quasiparticle comprising two electrons and one hole) in monolayer MoS2 under light irradiation and significantly reduces the charge recombination of photoexcited electron–hole pairs. This results in large photoluminescence suppression and an obvious photocurrent enhancement in monolayer MoS2 FETs.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesACS Nanoen_US
dc.rights© 2014 American Chemical Society.en_US
dc.subjectDRNTU::Engineering::Materials::Nanostructured materials
dc.titleElectron-doping-enhanced trion formation in monolayer molybdenum disulfide functionalized with cesium carbonateen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1021/nn501580c


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