Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/103445
Title: Layer-by-layer thinning of MoS2 by thermal annealing
Authors: Lu, Xin
Utama, Muhammad Iqbal Bakti
Zhang, Jun
Zhao, Yanyuan
Xiong, Qihua
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 2013
Source: Lu, X., Utama, M. I. B., Zhang, J., Zhao, Y., & Xiong, Q. (2013). Layer-by-layer thinning of MoS 2 by thermal annealing. Nanoscale, 5(19), 8904-8908.
Series/Report no.: Nanoscale
Abstract: By thermal annealing, few-layer MoS2 flakes can be thinned down. In one hour, the upper layer is peeled off due to sublimation. Eventually, monolayer MoS2 is achieved. We have characterized the process by optical contrast, Raman spectroscopy and atomic force microscopy (AFM), and observed a mixture of surfaces of N and N − 1 layers.
URI: https://hdl.handle.net/10356/103445
http://hdl.handle.net/10220/24522
DOI: http://dx.doi.org/10.1039/C3NR03101B
Rights: This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
SPMS Journal Articles

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