Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/103625
Title: Solid source growth of Si oxide nanowires promoted by carbon nanotubes
Authors: Lu, Congxiang
Liu, Wen-wen
Tan, Chong Wei
Tay, Beng Kang
Coquet, Philippe
Wang, Xingli
Li, Xiaocheng
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Applications of electronics
Issue Date: 2014
Source: Lu, C., Liu, W.-w., Wang, X., Li, X., Tan, C. W., Tay, B. K., et al. (2014). Solid source growth of Si oxide nanowires promoted by carbon nanotubes. Applied surface science, 314, 119-123.
Series/Report no.: Applied surface science
Abstract: We report a method to promote solid source growth of Si oxide nanowires (SiONWs) by using an array of vertically aligned carbon nanotubes (CNTs). It starts with the fabrication of CNT array by plasma enhanced chemical vapor deposition (PECVD) on Si wafers, followed by growth of SiONWs. Herein, CNTs serve as a scaffold, which helps the dispersion of catalysts for SiONWs and also provides space for hydrogen which boosts the diffusion of Si atoms and hence formation of SiONWs. As the result, a three dimensional (3D) hybrid network of densely packed SiONWs and CNTs can be produced rapidly.
URI: https://hdl.handle.net/10356/103625
http://hdl.handle.net/10220/24540
ISSN: 0169-4332
DOI: http://dx.doi.org/10.1016/j.apsusc.2014.06.141
Rights: © 2014 Elsevier B.V. This is the author created version of a work that has been peer reviewed and accepted for publication by Applied Surface Science, Elsevier B.V. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.apsusc.2014.06.141].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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