dc.contributor.authorChua, S. L.
dc.contributor.authorRazzaq, A.
dc.contributor.authorWee, K. H.
dc.contributor.authorLi, K. H.
dc.contributor.authorYu, H.
dc.contributor.authorTan, Chuan Seng
dc.date.accessioned2014-12-26T06:16:11Z
dc.date.available2014-12-26T06:16:11Z
dc.date.copyright2014en_US
dc.date.issued2014
dc.identifier.citationChua, S.L., Razzaq, A., Wee, K.H., Li, K.H., Yu, H., & Tan, C.S. (2014). TSV-less 3D stacking of MEMS and CMOS via low temperature Al-Au direct bonding with simultaneous formation of hermetic seal. IEEE Electronic Components and Technology Conference (ECTC) (64th : 2014), 324 - 331.en_US
dc.identifier.urihttp://hdl.handle.net/10220/24544
dc.description.abstract3D integration has been widely recognized as the next generation of technology for integrated microsystems with small form factor, high bandwidth, low power consumption, and possibility of heterogeneous More-than-Moore integration. Heterogeneous integration of MEMS and CMOS is critical in future development of multi-sensor data fusion in a low-cost chip size system. MEMS/CMOS integration was primarily done using monolithic and hybrid/package approaches until recently. In this work, 3D CMOS-on-MEMS stacking without TSV using direct (i.e. solder-less) metal bonding is demonstrated. This MEMS/CMOS integration leads to a simultaneous formation of electrical, mechanical, and hermetic bonds, eliminates chip-to-chip wire-bonding, and hence presents competitive advantages over hybrid or monolithic solutions. We present the fabrication flow and verify the performance of the stacked MEMS/CMOS microsystem in this paper.en_US
dc.format.extent8 p.en_US
dc.language.isoenen_US
dc.rights© 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/ECTC.2014.6897306].en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Electronic systems
dc.titleTSV-less 3D stacking of MEMS and CMOS via low temperature Al-Au direct bonding with simultaneous formation of hermetic sealen_US
dc.typeConference Paper
dc.contributor.conferenceIEEE Electronic Components and Technology Conference (ECTC) (64th : 2014)en_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1109/ECTC.2014.6897306
dc.description.versionAccepted versionen_US


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