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|Title:||Detrimental influence of catalyst seeding on the device properties of CVD-grown 2D layered materials : a case study on MoSe2||Authors:||Xiong, Qihua
Utama, M. Iqbal Bakti
|Keywords:||DRNTU::Engineering::Materials::Energy materials||Issue Date:||2014||Source:||Utama, M. I. B., Lu, X., Yuan, Y., & Xiong, Q. (2014). Detrimental influence of catalyst seeding on the device properties of CVD-grown 2D layered materials : a case study on MoSe2. Applied physics letters, 105(25), 253102-.||Series/Report no.:||Applied physics letters||Abstract:||Seed catalyst such as perylene-3,4,9,10-tetracarboxylic acid tetrapotassium (PTAS) salt has been used for promoting the growth of atomically thin layered materials in chemical vapor deposition (CVD) synthesis. However, the ramifications from the usage of such catalyst are not known comprehensively. Here, we report the influence of PTAS seeding on the transistor device performance from few-layered CVD-grown molybdenum diselenide (MoSe2) flakes. While better repeatability and higher yield can be obtained with the use of PTAS seeds in synthesis, we observed that PTAS-seeded flakes contain particle impurities. Moreover, devices from PTAS-seeded MoSe2 flakes consistently displayed poorer field-effect mobility, current on-off ratio, and subthreshold swing as compared to unseeded flakes.||URI:||https://hdl.handle.net/10356/103789
|ISSN:||0003-6951||DOI:||10.1063/1.4904945||Rights:||© 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4904945]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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