dc.contributor.authorZhu, W.
dc.contributor.authorChen, T. P.
dc.contributor.authorLiu, Y.
dc.contributor.authorLiu, Z.
dc.date.accessioned2015-01-16T02:24:24Z
dc.date.available2015-01-16T02:24:24Z
dc.date.copyright2014en_US
dc.date.issued2014
dc.identifier.citationZhu, W., Chen, T. P., Liu, Y., & Liu, Z. (2014). Al content-dependent resistive switching in Al-rich AlOxNy thin films. Nanoscience and nanotechnology letters, 6(9), 835-839.en_US
dc.identifier.urihttp://hdl.handle.net/10220/24647
dc.description.abstractResistive switching can occur in Al-rich AlO x N y thin films depending on the Al content, i.e., the films with a small Al content exhibit resistive switching, but no resistive switch is observed in the films with a large Al content. The forming voltage, set/reset voltages, currents at the low- and high-resistance states, and conduction behavior of the low-resistance state are found to be dependent of the Al content. The phenomena can be explained by the changes in the complete filaments that consist of the metallic filaments formed by Al nanophases and the non-metallic filaments formed by oxygen vacancies.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesNanoscience and nanotechnology lettersen_US
dc.rights© 2014 American Scientific Publishers.en_US
dc.subjectDRNTU::Engineering::Materials::Nanostructured materials
dc.subjectDRNTU::Engineering::Nanotechnology
dc.titleAl content-dependent resistive switching in Al-rich AlOxNy thin filmsen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1166/nnl.2014.1862


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