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|Title:||Review of nanostructured resistive switching memristor and its applications||Authors:||Hu, S. G.
Wu, S. Y.
Jia, W. W.
Deng, L. J.
Fu, Y. Q.
Chen, T. P.
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics||Issue Date:||2014||Source:||Hu, S. G., Wu, S. Y., Jia, W. W., Yu, Q., Deng, L. J., Fu, Y. Q., et al. (2014). Review of Nanostructured Resistive Switching Memristor and Its Applications. Nanoscience and Nanotechnology Letters, 6(9), 729-757.||Series/Report no.:||Nanoscience and nanotechnology letters||Abstract:||Resistive switching memristor, predicted as the fourth fundamental passive circuit element (in addition to resistor, capacitor, and inductor) in the world by Leon Chua in 1971 and demonstrated by Hewlett Packard laboratory in 2008, has attracted extensive research attention for its high scalability and versatility. In this paper, we reviewed the working mechanisms and mathematical models of nanostructured resistive switching memristors, and examined various emerging applications of the memristors, including memory, analog, logic and neuromorphic applications.||URI:||https://hdl.handle.net/10356/103951
|DOI:||http://dx.doi.org/10.1166/nnl.2014.1888||Rights:||© 2014 American Scientific Publishers.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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