dc.contributor.authorHu, S. G.
dc.contributor.authorWu, S. Y.
dc.contributor.authorJia, W. W.
dc.contributor.authorYu, Q.
dc.contributor.authorDeng, L. J.
dc.contributor.authorFu, Y. Q.
dc.contributor.authorLiu, Y.
dc.contributor.authorChen, T. P.
dc.date.accessioned2015-01-16T03:37:00Z
dc.date.available2015-01-16T03:37:00Z
dc.date.copyright2014en_US
dc.date.issued2014
dc.identifier.citationHu, S. G., Wu, S. Y., Jia, W. W., Yu, Q., Deng, L. J., Fu, Y. Q., et al. (2014). Review of Nanostructured Resistive Switching Memristor and Its Applications. Nanoscience and Nanotechnology Letters, 6(9), 729-757.en_US
dc.identifier.urihttp://hdl.handle.net/10220/24651
dc.description.abstractResistive switching memristor, predicted as the fourth fundamental passive circuit element (in addition to resistor, capacitor, and inductor) in the world by Leon Chua in 1971 and demonstrated by Hewlett Packard laboratory in 2008, has attracted extensive research attention for its high scalability and versatility. In this paper, we reviewed the working mechanisms and mathematical models of nanostructured resistive switching memristors, and examined various emerging applications of the memristors, including memory, analog, logic and neuromorphic applications.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesNanoscience and nanotechnology lettersen_US
dc.rights© 2014 American Scientific Publishers.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
dc.titleReview of nanostructured resistive switching memristor and its applicationsen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1166/nnl.2014.1888


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