dc.contributor.authorWong, J. I.
dc.contributor.authorChen, T. P.
dc.contributor.authorTay, Y. Y.
dc.contributor.authorLiu, P.
dc.contributor.authorYang, M.
dc.contributor.authorLiu, Z.
dc.contributor.authorYang, H. Y.
dc.identifier.citationWong, J. I., Chen, T. P., Tay, Y. Y., Liu, P., Yang, M., Liu, Z., et al. (2014). An experimental study of lateral charge transfer in silicon nanocrystal layer embedded in SiO2 thin film. Nanoscience and nanotechnology letters, 6(9), 798-804.en_US
dc.description.abstractLateral charge transfer in a Si nanocrystal (nc-Si) layer embedded in a SiO2 thin film synthesized by Si ion implantation is investigated. When the nc-Si in one metal-oxide-semiconductor device is charged, the charging effect on both the charged device itself and the neighboring devices is monitored. With the existence of a continuous nc-Si layer in the spacing regions between the charged device and the neighboring devices, the charging operation induces a large flat-band voltage shift in the neighboring devices, and at the same time the charged device itself is also strongly affected in return. The phenomenon depends on both the nc-Si separation and the device spacing. It is attributed to the lateral charge transfer in the nc-Si layer. The result has an important indication for non-volatile memory applications of the nc-Si synthesized by the ion implantation technique.en_US
dc.relation.ispartofseriesNanoscience and nanotechnology lettersen_US
dc.rights© 2014 American Scientific Publishers.en_US
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
dc.titleAn experimental study of lateral charge transfer in silicon nanocrystal layer embedded in SiO2 thin filmen_US
dc.typeJournal Article
dc.contributor.researchFacility for Analysis, Characterisation, Testing and Simulationen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US

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