dc.contributor.authorWong, J. I.
dc.contributor.authorChen, T. P.
dc.contributor.authorTay, Y. Y.
dc.contributor.authorLiu, P.
dc.contributor.authorYang, M.
dc.contributor.authorLiu, Z.
dc.contributor.authorYang, H. Y.
dc.date.accessioned2015-01-16T04:19:21Z
dc.date.available2015-01-16T04:19:21Z
dc.date.copyright2014en_US
dc.date.issued2014
dc.identifier.citationWong, J. I., Chen, T. P., Tay, Y. Y., Liu, P., Yang, M., Liu, Z., et al. (2014). An experimental study of lateral charge transfer in silicon nanocrystal layer embedded in SiO2 thin film. Nanoscience and nanotechnology letters, 6(9), 798-804.en_US
dc.identifier.urihttp://hdl.handle.net/10220/24654
dc.description.abstractLateral charge transfer in a Si nanocrystal (nc-Si) layer embedded in a SiO2 thin film synthesized by Si ion implantation is investigated. When the nc-Si in one metal-oxide-semiconductor device is charged, the charging effect on both the charged device itself and the neighboring devices is monitored. With the existence of a continuous nc-Si layer in the spacing regions between the charged device and the neighboring devices, the charging operation induces a large flat-band voltage shift in the neighboring devices, and at the same time the charged device itself is also strongly affected in return. The phenomenon depends on both the nc-Si separation and the device spacing. It is attributed to the lateral charge transfer in the nc-Si layer. The result has an important indication for non-volatile memory applications of the nc-Si synthesized by the ion implantation technique.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesNanoscience and nanotechnology lettersen_US
dc.rights© 2014 American Scientific Publishers.en_US
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
dc.titleAn experimental study of lateral charge transfer in silicon nanocrystal layer embedded in SiO2 thin filmen_US
dc.typeJournal Article
dc.contributor.researchFacility for Analysis, Characterisation, Testing and Simulationen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1166/nnl.2014.1861


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