dc.contributor.authorTan, Chaoliang
dc.contributor.authorZeng, Zhiyuan
dc.contributor.authorHuang, Xiao
dc.contributor.authorRui, Xianhong
dc.contributor.authorWu, Xue-Jun
dc.contributor.authorLi, Bing
dc.contributor.authorLuo, Zhimin
dc.contributor.authorChen, Junze
dc.contributor.authorChen, Bo
dc.contributor.authorYan, Qingyu
dc.contributor.authorZhang, Hua
dc.date.accessioned2015-01-16T08:51:30Z
dc.date.available2015-01-16T08:51:30Z
dc.date.copyright2014en_US
dc.date.issued2014
dc.identifier.citationTan, C., Zeng, Z., Huang, X., Rui, X., Wu, X.-J., Li, B., et al. (2014). Liquid-phase epitaxial growth of two-dimensional semiconductor hetero-nanostructures. Angewandte chemie international edition, 54(6), 1841–1845.en_US
dc.identifier.issn1433-7851en_US
dc.identifier.urihttp://hdl.handle.net/10220/24662
dc.description.abstractAlthough many two-dimensional (2D) hybrid nanostructures are being prepared, the engineering of epitaxial 2D semiconductor hetero-nanostructures in the liquid phase still remains a challenge. The preparation of 2D semiconductor hetero-nanostructures by epitaxial growth of metal sulfide nanocrystals, including CuS, ZnS and Ni3S2, is achieved on ultrathin TiS2 nanosheets by a simple electrochemical approach by using the TiS2 crystal and metal foils. Ultrathin CuS nanoplates 50–120 nm in size and with a triangular/hexagonal shape are epitaxially grown on TiS2 nanosheets with perfect epitaxial alignment. ZnS and Ni3S2 nanoplates can be also epitaxially grown on TiS2 nanosheets. As a proof-of-concept application, the obtained 2D CuS–TiS2 composite is used as the anode in a lithium ion battery, which exhibits a high capacity and excellent cycling stability.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesAngewandte chemie international editionen_US
dc.rights© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_US
dc.subjectDRNTU::Engineering::Materials::Nanostructured materials
dc.titleLiquid-phase epitaxial growth of two-dimensional semiconductor hetero-nanostructuresen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1002/anie.201410890


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