Photovoltaic property of domain engineered epitaxial BiFeO3 films
Date of Issue2014
School of Materials Science and Engineering
The effect of domain structure on the photovoltaic response of BiFeO3 vertical capacitors is investigated, by domain engineering using vicinal SrTiO3 substrates. It is observed that the open-circuit photovoltage remains unaffected by the domain structure, consistent with the photovoltaic effect being driven by the polarization modulated band bending at the metal/BiFeO3 interface. Nevertheless, the enhancement of short-circuit photocurrent is achieved and attributed to the conducting domain walls. Furthermore, we have estimated and compared the magnitudes of photoconductivity of domains and domain walls in BiFeO3 thin films, which can be used to explain the photocurrent improvements. These findings cast some light on the role of domain walls in ferroelectric photovoltaic effects and provide a simple route towards enhanced efficiency.
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Applied physics letters
© 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4905000]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.