Detection of Ge and Si intermixing in Ge/Si using multiwavelength micro-raman spectroscopy
Yoo, Woo Sik
Tan, Chuan Seng
Date of Issue2014
School of Electrical and Electronic Engineering
To meet various physical property requirements of materials for advanced application, for specific devices, combinations of Si/Ge, Ge/Si, Si1-xGex/Si, are frequently introduced in the device fabrication process. Epitaxy, condensation and annealing processes are commonly used. Since a small variation in composition, strain and crystallinity can result in reduced device performance or failure, the composition, strain and crystallinity must be carefully monitored and controlled throughout the manufacturing process. We report the detection of Ge and Si intermixing in epitaxially grown Ge/Si after successive thermal anneals using multiwavelength Raman spectroscopy. We have studied the dependence of Ge and Si intermixing on annealing temperature and Raman excitation wavelength. Very strong dependence of signal-to-noise (S/N) ratio measurements on excitation wavelength and film structure was observed. Suitable excitation wavelengths must be chosen to properly detect and characterize Si and Ge intermixing, based on the stacking order of epitaxial films and thicknesses.
DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio
© 2014 The Electrochemical Society. This paper was published in ECS Transactions and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1149/06406.0079ecst]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.