Strain profile and size dependent electronic band structure of GeSn/SiSn quantum dots for optoelectronic application
Fan, W. J.
Zhang, D. H.
Tan, Chuan Seng
Date of Issue2014
International Conference on Fibre Optics and Photonics
School of Electrical and Electronic Engineering
Centre for Micro-/Nano-electronics (NOVITAS)
NOVITAS, Nanoelectronics Centre of Excellence
We study self-assembled GeSn/SiSn quantum dots for optoelectronic application in the Silicon photonics domain. Valence force field and k.p methods are used to investigate the strain distribution and band structure with size effect.
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
© 2014 OSA. This is the author created version of a work that has been peer reviewed and accepted for publication by International Conference on Fibre Optics and Photonics, Optical Society of America. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1364/PHOTONICS.2014.S4D.5].