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|Title:||Strain profile and size dependent electronic band structure of GeSn/SiSn quantum dots for optoelectronic application||Authors:||Tan, Chuan Seng
Fan, W. J.
Zhang, D. H.
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics||Issue Date:||2014||Source:||Bose, S., Fan, W. J., Chen, J., Zhang, D.H., & Tan, C. S. (2014). Strain profile and size dependent electronic band structure of GeSn/SiSn quantum dots for optoelectronic application. 12th International Conference on Fiber Optics and Photonics.||Abstract:||We study self-assembled GeSn/SiSn quantum dots for optoelectronic application in the Silicon photonics domain. Valence force field and k.p methods are used to investigate the strain distribution and band structure with size effect.||URI:||https://hdl.handle.net/10356/79533
|DOI:||http://dx.doi.org/10.1364/PHOTONICS.2014.S4D.5||Rights:||© 2014 OSA. This is the author created version of a work that has been peer reviewed and accepted for publication by International Conference on Fibre Optics and Photonics, Optical Society of America. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1364/PHOTONICS.2014.S4D.5].||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Conference Papers|
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|Strain Profile and Size Dependent Electronic Band Structure of GeSn-SiSn Quantum Dots for Optoelectronic Application.pdf||3 pages full paper - Conference||880.61 kB||Adobe PDF|
|GeSn-SiSn.SumantaBose.IITKgp.pdf||Conference Presentation PPT - Full length||3.44 MB||Adobe PDF|
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