dc.contributor.authorBose, Sumanta
dc.contributor.authorFan, W. J.
dc.contributor.authorChen, J.
dc.contributor.authorZhang, D. H.
dc.contributor.authorTan, Chuan Seng
dc.identifier.citationBose, S., Fan, W. J., Chen, J., Zhang, D.H., & Tan, C. S. (2014). Strain profile and size dependent electronic band structure of GeSn/SiSn quantum dots for optoelectronic application. 12th International Conference on Fiber Optics and Photonics.en_US
dc.description.abstractWe study self-assembled GeSn/SiSn quantum dots for optoelectronic application in the Silicon photonics domain. Valence force field and k.p methods are used to investigate the strain distribution and band structure with size effect.en_US
dc.description.sponsorshipMOE (Min. of Education, S’pore)en_US
dc.rights© 2014 OSA. This is the author created version of a work that has been peer reviewed and accepted for publication by International Conference on Fibre Optics and Photonics, Optical Society of America. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1364/PHOTONICS.2014.S4D.5].en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
dc.titleStrain profile and size dependent electronic band structure of GeSn/SiSn quantum dots for optoelectronic applicationen_US
dc.typeConference Paper
dc.contributor.conferenceInternational Conference on Fibre Optics and Photonicsen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.versionAccepted versionen_US
dc.contributor.organizationNOVITAS, Nanoelectronics Centre of Excellenceen_US

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