AlN-AlN wafer bonding and its thermal characteristics
Lee, Kwang Hong
Chong, Gang Yih
Fitzgerald, Eugene A
Tan, Chuan Seng
Date of Issue2014
School of Electrical and Electronic Engineering
Homogeneous bonding was successfully demonstrated on 150 mm Si wafers by face-to-face fusion bonding of two clean and smooth aluminum nitride (AlN) layers. Characterization result from XPS confirms the layer composition and reveals that approximately 5 nm of the layer surface was partially oxidized during processing. The as-bonded wafer pair is nearly void and particle free with a high bonding strength of 1263.0 mJ/m2, enabling it to withstand the subsequent process steps. In addition, the AlN-AlN bonded wafers appear to have the best heat dissipation capability when compared with other bonded wafers, which used SiO2 or Al2O3 as the bonding layer.
DRNTU::Engineering::Electrical and electronic engineering::Electric power::Auxiliaries, applications and electric industries
© 2014 The Electrochemical Society. This paper was published in AlN-AlN Wafer Bonding and Its Thermal Characteristics and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1149/06405.0141ecst]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.