dc.contributor.authorAng, Wan Chia
dc.contributor.authorKropelnicki, Piotr
dc.contributor.authorTsai, Julius Ming Lin
dc.contributor.authorLeong, Kam Chew
dc.contributor.authorTan, Chuan Seng
dc.identifier.citationAng, W. C., Kropelnicki, P., Tsai, J. M. L., Leong, K. C., & Tan, C. S. (2014). Design, simulation and characterization of wheatstone bridge structured metal thin film uncooled microbolometer. Procedia engineering, 94, 6-13.en_US
dc.description.abstractIt is demonstrated for the first time that the Wheatstone bridge structured metal thin film resistive uncooled microbolometer (in short, WB-bolometer) provides promising temperature sensitivity. This paper describes the design, simulation, and characterization of WB-bolometer using titanium nitride (TiN) thin film as the infrared (IR) sensing material. TiN thin film is designed into four resistors which are connected to each other in Wheatstone bridge configuration. The resistance value of each resistor changes with different rates upon IR absorption, which can be attributed to the difference in their associated thermal conductance. As a result, the bridge output voltage varies in response to the absorbed IR power. Simulation was employed to compare and characterize different designs of WB-bolometer. It was found that design with two sensing elements has the optimum performance. The proposed WB-bolometer is also capable of operating at elevated temperatures (> 250 oC) due to its adjustable and small initial offset voltage with minimum associated noise.en_US
dc.relation.ispartofseriesProcedia Engineering*
dc.rights© 2014 Chuan Seng Tan. Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/3.0/).en_US
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
dc.titleDesign, simulation and characterization of wheatstone bridge structured metal thin film uncooled microbolometeren_US
dc.typeConference Paper
dc.contributor.conferenceInternational Conference on Materials for Advanced Technologies (ICMAT) (7th : 2013)en_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.versionPublished versionen_US

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