dc.contributor.authorChua, Chin Sheng
dc.contributor.authorFang, Xiaoqin
dc.contributor.authorChen, Xiaofeng
dc.contributor.authorTan, Ooi Kiang
dc.contributor.authorTse, Man Siu
dc.contributor.authorSoutar, Andrew McIntosh
dc.contributor.authorDing, Xingzhao
dc.identifier.citationChua, C. S., Fang, X., Chen, X., Tan, O. K., Tse, M. S., Soutar, A. M., et al. (2014). Effect of annealing temperature on microstructure and UV light photocatalytic activity of TiO2 films grown by atmospheric pressure CVD. Chemical vapor deposition, 20(1-2-3), 44-50.en_US
dc.description.abstractTitanium dioxide (TiO2) films are deposited on quartz substrates by atmospheric pressure (AP)CVD, and then annealed under simulated air (80% nitrogen, 20% oxygen) at temperatures from 600 to 900 °C to investigate the change in microstructure and the effect on the photocatalytic activity on the simulated pollutant stearic acid. The as-deposited TiO2 film is mainly composed of pure anatase phase while the rutile phase is detected only after annealing the film at 900 °C for 1 h. The photocatalytic activity of the annealed films on stearic acid under UV irradiation is found to deteriorate after the films are annealed at temperatures above 700 °C. This decrease in photocatalytic performance is observed to be the result of two possible mechanisms induced by the annealing temperature. The first mechanism is the increase in defect concentration (O− and Ti vacancies) in the annealed TiO2 films for annealing temperatures below 800 °C, and the second mechanism is the formation of large rutile grains at a higher temperature, 900 °C.en_US
dc.relation.ispartofseriesChemical vapor depositionen_US
dc.rights© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_US
dc.subjectDRNTU::Science::Chemistry::Crystallography::Chemical crystallography
dc.titleEffect of annealing temperature on microstructure and UV light photocatalytic activity of TiO2 films grown by atmospheric pressure CVDen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.organizationA*STAR SIMTechen_US

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