dc.contributor.authorYoo, Woo Sik
dc.contributor.authorKang, Kitaek
dc.contributor.authorUeda, Takeshi
dc.contributor.authorIshigaki, Toshikazu
dc.contributor.authorNishigaki, Hiroshi
dc.contributor.authorHasuike, Noriyuki
dc.contributor.authorHarima, Hiroshi
dc.contributor.authorYoshimoto, Masahiro
dc.contributor.authorTan, Chuan Seng
dc.date.accessioned2015-03-12T02:42:39Z
dc.date.available2015-03-12T02:42:39Z
dc.date.copyright2014en_US
dc.date.issued2014
dc.identifier.citationYoo, W. S., Kang, K., Ueda, T., Ishigaki, T., Nishigaki, H., Hasuike, N., et al. (2014). Characterization of hetero-epitaxial Ge films on Si using multiwavelength micro-raman spectroscopy. ECS journal of solid state science and technology, 4(2), Pg 9-15.en_US
dc.identifier.issn2162-8769en_US
dc.identifier.urihttp://hdl.handle.net/10220/25240
dc.description.abstractTo meet various physical property requirements of materials for advanced applications for specific devices, combinations of Si/Ge, Ge/Si, Si1-xGex/Si, are frequently introduced in the device fabrication process. Epitaxy, condensation and annealing processes are commonly used. Since a small variation in composition, strain and crystallinity can result in reduced device performance or failure, the composition, strain and crystallinity must be carefully monitored and controlled throughout the manufacturing process. We have studied the dependence of Ge and Si intermixing on annealing temperature and Raman excitation wavelength. Using multiwavelength Raman spectroscopy, we found Ge and Si intermixing in epitaxially grown Ge(100)/Si(100) after successive thermal anneals. Very strong dependence of signal-to-noise (S/N) ratio measurements on excitation wavelength and film structure was observed. Suitable excitation wavelengths must be chosen to properly characterize Si and Ge-based heteroepitaxial layers based on the thickness, stacking order and composition of epitaxial films having different optical properties at different wavelengths.en_US
dc.format.extent7 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesECS journal of solid state science and technologyen_US
dc.rights© The Author(s) 2014. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited.en_US
dc.subjectDRNTU::Science::Physics::Atomic physics::Solid state physics
dc.titleCharacterization of hetero-epitaxial Ge films on Si using multiwavelength micro-raman spectroscopyen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1149/2.0041502jss
dc.description.versionPublished versionen_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record