dc.contributor.authorArulkumaran, S.
dc.contributor.authorNg, G. I.
dc.contributor.authorManoj Kumar, C. M.
dc.contributor.authorRanjan, K.
dc.contributor.authorTeo, K. L.
dc.contributor.authorShoron, O. F.
dc.contributor.authorRajan, S.
dc.contributor.authorBin Dolmanan, S.
dc.contributor.authorTripathy, S.
dc.identifier.citationArulkumaran, S., Ng, G. I., Manoj Kumar, C. M., Ranjan, K., Teo, K. L., Shoron, O. F., et al. (2015). Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors. Applied physics letters, 106(5), 053502-.en_US
dc.description.abstractA stress engineered three dimensional (3D) Triple T-gate (TT-gate) on lattice matched In0.17 Al 0.83N/GaN nano-channel (NC) Fin-High-Electron-Mobility Transistor (Fin-HEMT) with significantly enhanced device performance was achieved that is promising for high-speed device applications. The Fin-HEMT with 200-nm effective fin-width (W eff) exhibited a very high I Dmax of 3940 mA/mm and a highest g m of 1417 mS/mm. This dramatic increase of I D and g m in the 3D TT-gate In0.17 Al 0.83N/GaN NC Fin-HEMT translated to an extracted highest electron velocity (v e) of 6.0 × 107 cm/s, which is ∼1.89× higher than that of the conventional In0.17 Al 0.83N/GaN HEMT (3.17 × 107 cm/s). The v e in the conventional III-nitride transistors are typically limited by highly efficient optical-phonon emission. However, the unusually high v e at 300 K in the 3D TT-gate In0.17 Al 0.83N/GaN NC Fin-HEMT is attributed to the increase of in-plane tensile stress component by SiN passivation in the formed NC which is also verified by micro-photoluminescence (0.47 ± 0.02 GPa) and micro-Raman spectroscopy (0.39 ± 0.12 GPa) measurements. The ability to reach the ve  = 6 × 107 cm/s at 300 K by a stress engineered 3D TT-gate lattice-matched In0.17 Al 0.83N/GaN NC Fin-HEMTs shows they are promising for next-generation ultra-scaled high-speed device applications.en_US
dc.relation.ispartofseriesApplied physics lettersen_US
dc.rights© 2015 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4906970].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Electronic systems
dc.titleElectron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistorsen_US
dc.typeJournal Article
dc.contributor.researchTemasek Laboratoriesen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.versionPublished versionen_US

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