dc.contributor.authorSun, Juan
dc.contributor.authorNalla, Venkatram
dc.contributor.authorNguyen, Mai
dc.contributor.authorRen, Yi
dc.contributor.authorChiam, Sing Yang
dc.contributor.authorWang, Yue
dc.contributor.authorTai, Kong Fai
dc.contributor.authorSun, Handong
dc.contributor.authorZheludev, Nikolay
dc.contributor.authorBatabyal, Sudip K.
dc.contributor.authorWong, Lydia H.
dc.date.accessioned2015-04-02T02:53:52Z
dc.date.available2015-04-02T02:53:52Z
dc.date.copyright2015en_US
dc.date.issued2015
dc.identifier.citationSun, J., Nalla, V., Nguyen, M., Ren, Y., Chiam, S. Y., Wang, Y., et al. (2015). Effect of Zn(O,S) buffer layer thickness on charge carrier relaxation dynamics of CuInSe2 solar cell. Solar energy, 115, 396-404.en_US
dc.identifier.issn0038-092Xen_US
dc.identifier.urihttp://hdl.handle.net/10220/25312
dc.description.abstractA pinhole free Zn(O,S) buffer layer was deposited on CuInSe2 (CIS) absorber by chemical bath deposition (CBD) method. Thin Zn(O,S) exhibits better power conversion efficiency (PCE) at lower thickness. Enhancement of PCE from 1.5% to 3.9% was observed for electrodeposited CIS photovoltaic device when the buffer layer thickness reduces from 50 nm to 20 nm. Although the conduction band offset (CBO) at Zn(O,S)/CIS interface are almost identical for both the 20 nm and 50 nm thick buffer layers, investigation on charge carrier dynamics reveals that the carrier lifetime for the 20 nm buffer is much longer than the 50 nm buffer. This offers a plausible explanation for the higher Jsc of the device with 20 nm buffer layer compared to the device with 50 nm buffer layer.en_US
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en_US
dc.description.sponsorshipMOE (Min. of Education, S’pore)en_US
dc.description.sponsorshipEDB (Economic Devt. Board, S’pore)en_US
dc.format.extent24 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesSolar energyen_US
dc.rights© 2015 Elsevier Ltd. This is the author created version of a work that has been peer reviewed and accepted for publication by Solar Energy, Elsevier Ltd. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.solener.2015.03.008].en_US
dc.subjectDRNTU::Engineering::Materials::Energy materials
dc.titleEffect of Zn(O,S) buffer layer thickness on charge carrier relaxation dynamics of CuInSe2 solar cellen_US
dc.typeJournal Article
dc.contributor.researchEnergy Research Institute
dc.contributor.researchCentre for Disruptive Photonic Technologies
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.identifier.doihttp://dx.doi.org/10.1016/j.solener.2015.03.008
dc.description.versionAccepted versionen_US


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