dc.contributor.authorArulkumaran, Subramaniam
dc.contributor.authorNg, Geok Ing
dc.contributor.authorRanjan, Kumud
dc.contributor.authorKumar, Chandra Mohan Manoj
dc.contributor.authorFoo, Siew Chuen
dc.contributor.authorAng, Kian Siong
dc.contributor.authorVicknesh, Sahmuganathan
dc.contributor.authorDolmanan, Surani Bin
dc.contributor.authorBhat, Thirumaleshwara
dc.contributor.authorTripathy, Sudhiranjan
dc.identifier.citationArulkumaran, S., Ng, G. I., Ranjan, K., Kumar, C. M. M., Foo, S. C., Ang, K. S., & et al. (2015). Record-low contact resistance for InAlN/AlN/GaN high electron mobility transistors on Si with non-gold metal. Japanese journal of applied physics, 54.en_US
dc.description.abstractWe have demonstrated 0.17-µm gate-length In0.17Al0.83N/GaN high-electron-mobility transistors (HEMTs) on Si(111) substrates using a non-gold metal stack (Ta/Si/Ti/Al/Ni/Ta) with a record-low ohmic contact resistance (Rc) of 0.36 Ω mm. This contact resistance is comparable to the conventional gold-based (Ti/Al/Ni/Au) ohmic contact resistance (Rc = 0.33 Ω mm). A non-gold ohmic contact exhibited a smooth surface morphology with a root mean square surface roughness of ~2.1 nm (scan area of 5 × 5 µm2). The HEMTs exhibited a maximum drain current density of 1110 mA/mm, a maximum extrinsic transconductance of 353 mS/mm, a unity current gain cutoff frequency of 48 GHz, and a maximum oscillation frequency of 66 GHz. These devices exhibited a very small (<8%) drain current collapse for the quiescent biases (Vgs0 = −5 V, Vds0 = 10 V) with a pulse width/period of 200 ns/1 ms. These results demonstrate the feasibility of using a non-gold metal stack as a low Rc ohmic contact for the realization of high-frequency operating InAlN/AlN/GaN HEMTs on Si substrates without using recess etching and regrowth processes.en_US
dc.format.extent5 p.en_US
dc.relation.ispartofseriesJapanese journal of applied physicsen_US
dc.rights© 2015 The Japan Society of Applied Physics. This is the author created version of a work that has been peer reviewed and accepted for publication by Japanese journal of applied physics, The Japan Society of Applied Physics. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.7567/JJAP.54.04DF12].en_US
dc.titleRecord low contact resistance for InAlN/GaN HEMTs on Si with non-gold metalen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.versionAccepted version

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