Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/107098
Title: A facile and universal top-down method for preparation of monodisperse transition-metal dichalcogenide nanodots
Authors: Huang, Ying
Zhang, Xiao
Lai, Zhuangchai
Liu, Zhengdong
Tan, Chaoliang
Li, Bing
Zhao, Meiting
Xie, Linghai
Huang, Wei
Zhang, Hua
Keywords: DRNTU::Science::Chemistry::Physical chemistry::Quantum chemistry
Issue Date: 2015
Source: Zhang, X., Lai, Z., Liu, Z., Tan, C., Huang, Y., Li, B., et al. (2015). A facile and universal top-down method for preparation of monodisperse transition-metal dichalcogenide nanodots. Angewandte chemie International edition, 54(18), 5425-5428.
Series/Report no.: Angewandte chemie International edition
Abstract: Despite unique properties of layered transition-metal dichalcogenide (TMD) nanosheets, there is still lack of a facile and general strategy for the preparation of TMD nanodots (NDs). Reported herein is the preparation of a series of TMD NDs, including TMD quantum dots (e.g. MoS2, WS2, ReS2, TaS2, MoSe2 and WSe2) and NbSe2 NDs, from their bulk crystals by using a combination of grinding and sonication techniques. These NDs could be easily separated from the N-methyl-2-pyrrolidone when post-treated with n-hexane and then chloroform. All the TMD NDs with sizes of less than 10 nm show a narrow size distribution with high dispersity in solution. As a proof-of-concept application, memory devices using TMD NDs, for example, MoSe2, WS2, or NbSe2, mixed with polyvinylpyrrolidone as active layers, have been fabricated, which exhibit a nonvolatile write-once-read-many behavior. These high-quality TMD NDs should have various applications in optoelectronics, solar cells, catalysis, and biomedicine.
URI: https://hdl.handle.net/10356/107098
http://hdl.handle.net/10220/25340
ISSN: 1521-3773
DOI: 10.1002/anie.201501071
Rights: © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
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