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|Title:||A facile and universal top-down method for preparation of monodisperse transition-metal dichalcogenide nanodots||Authors:||Huang, Ying
|Keywords:||DRNTU::Science::Chemistry::Physical chemistry::Quantum chemistry||Issue Date:||2015||Source:||Zhang, X., Lai, Z., Liu, Z., Tan, C., Huang, Y., Li, B., et al. (2015). A facile and universal top-down method for preparation of monodisperse transition-metal dichalcogenide nanodots. Angewandte chemie International edition, 54(18), 5425-5428.||Series/Report no.:||Angewandte chemie International edition||Abstract:||Despite unique properties of layered transition-metal dichalcogenide (TMD) nanosheets, there is still lack of a facile and general strategy for the preparation of TMD nanodots (NDs). Reported herein is the preparation of a series of TMD NDs, including TMD quantum dots (e.g. MoS2, WS2, ReS2, TaS2, MoSe2 and WSe2) and NbSe2 NDs, from their bulk crystals by using a combination of grinding and sonication techniques. These NDs could be easily separated from the N-methyl-2-pyrrolidone when post-treated with n-hexane and then chloroform. All the TMD NDs with sizes of less than 10 nm show a narrow size distribution with high dispersity in solution. As a proof-of-concept application, memory devices using TMD NDs, for example, MoSe2, WS2, or NbSe2, mixed with polyvinylpyrrolidone as active layers, have been fabricated, which exhibit a nonvolatile write-once-read-many behavior. These high-quality TMD NDs should have various applications in optoelectronics, solar cells, catalysis, and biomedicine.||URI:||https://hdl.handle.net/10356/107098
|ISSN:||1521-3773||DOI:||10.1002/anie.201501071||Rights:||© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||ERI@N Journal Articles|
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