Growth of reduced graphene oxide
Faulkner, Steve H.
Nimmo, Myra A.
Tok, Alfred Iing Yoong
Date of Issue2014
2014 MRS Spring Meeting
School of Materials Science and Engineering
Institute for Sports Research
Reduced graphene oxide (RGO) has the advantage of an aqueous and industrial-scalable production route. However, one of the main limitations that prevent the use of RGO in electronics is the high electrical resistance deviation between fabricated chips. In this article, we present the novel growth of RGO which can bridge the gaps in-between existing flakes and thus reduce the electrical resistance standard deviation from 80.5 % to 16.5 %. The average resistivity of the treated RGO of ∼ 3.8 nm thickness was 200 Ω/square. The study uses an atmospheric-pressure chemical vapour deposition (CVD) system with hydrogen and argon gas bubbling through ethanol before entering the furnace. With a treatment of 2 hours, 100 % of the silicon dioxide substrate was covered with RGO from an initial 65 % coverage. This technology could enable large-scale application of RGO use in practical electronic devices.
© 2014 Materials Research Society. This paper was published in Materials Research Society Symposium Proceedings and is made available as an electronic reprint (preprint) with permission of Materials Research Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1557/opl.2014.854]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.