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      Highly reliable spin-transfer torque magnetic RAM based physical unclonable function with multi-response-bits per cell

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      Author
      Zhang, Le
      Fong, Xuanyao
      Chang, Chip-Hong
      Kong, Zhi Hui
      Roy, Kaushik
      Date of Issue
      2015
      School
      School of Electrical and Electronic Engineering
      Version
      Accepted version
      Abstract
      Memory-based Physical Unclonable Function (MemPUF) has gained tremendous popularity in the recent years to securely preserve secret information in computing systems. Most MemPUFs in the literature have unreliable bit generation and/or are incapable of generating more than one response-bit per cell. Hence, we propose a novel MemPUF exploiting the unique characteristics of Spin-Transfer Torque Magnetic RAM (STT-MRAM) that can overcome these issues. Bit generation in our STT-MRAM based MemPUF is stabilized using a novel automatic write-back technique. Also, the alterability of the Magnetic Tunneling Junction (MTJ) state is exploited to expand the response-bit capacity per cell. Our analysis demonstrated the advantage of our scheme in reliability enhancement (Bit-Error Rate from 10 −1 to 10 −6 in the worst-case under varying conditions) and response-bit capacity per cell improvement (from 1 bit to 1:48 bits). In comparison with the conventional MemPUFs, our approach is also better in terms of the average chip area and energy for producing a response-bit.
      Subject
      DRNTU::Engineering::Computer science and engineering::Information systems
      Type
      Journal Article
      Series/Journal Title
      IEEE transactions on information forensics and security
      Rights
      © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [Article DOI: http://dx.doi.org/10.1109/TIFS.2015.2421481].
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      http://dx.doi.org/10.1109/TIFS.2015.2421481
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