High-frequency microwave noise characteristics of InAlN/GaN high-electron mobility transistors on Si (111) substrate
Ng, G. I.
Manoj Kumar, C. M.
Dolmanan, S. B.
Date of Issue2014
We report for the first time high-frequency microwave noise performance on 0.17-μm T-gate In0.17Al0.83N/GaN high-electron mobility transistors (HEMTs) fabricated on Si(111). The HEMTs exhibited a maximum drain current density of 1320 mA/mm, a maximum extrinsic transconductance of 363 mS/mm, an unity current gain cutoff frequency (fT) of 64 GHz and, a maximum oscillation frequency [fmax (U)/ fmax (MSG)] of 72/106 GHz. The product fmax(U) × Lg=12.24 GHz· μm is the highest value ever reported for InAlN/GaN HEMTs on Si substrate. At Vd=4 V and Vg=-2.25 V, the device exhibited a minimum noise figure (NFmin) of 1.16 dB for 10 GHz and 1.76 dB for 18 GHz. Small variation of NFmin (<;0.5 dB) from 8% to 48% with IDmax (100-636 mA/mm) was observed.
DRNTU::Engineering::Electrical and electronic engineering::Applications of electronics
IEEE electron device letters
© 2014 IEEE. This is the author created version of a work that has been peer reviewed and accepted for publication by IEEE electron device letters, IEEE. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1109/LED.2014.2343455].