In0.17Al0.83N/AlN/GaN triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V
Ng, Geok Ing
Manoj Kumar, Chandra Mohan
Teo, Khoon Leng
Shoron, O. F.
Dolmanan, S. B.
Date of Issue2014
2014 IEEE International Electron Devices Meeting (IEDM)
We report the first 3D Triple T-gate InAlN/GaN nano-channel (NC) Fin-HEMTs on Si substrate with record high device performances at VD as low as 0.5 V. Utilizing a T-gate approach on NC Fin-HEMT with stress engineered techniques, enhanced device transport properties with gm=646 mS/mm, Ion=1.03 A/mm, IOFF=1.13 μA/mm, ION/IOFF~106, SS=82 mV/dec at VD=0.5 V were achieved. In addition, the Fin-HEMT also exhibited 3.2 times lower DIBL of 28 mV/V. The dramatic improvement of device performance is due to the tensile stress induced by SiN passivation in the NC Fin-HEMT.
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors