Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/100489
Title: | Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stack | Authors: | Arulkumaran, Subramaniam Ng, Geok Ing Vicknesh, Sahmuganathan Wang, Hong Ang, Kian Siong Kumar, Chandramohan Manoj Teo, Khoon Leng Ranjan, Kumud |
Keywords: | DRNTU::Science::Physics | Issue Date: | 2013 | Source: | Arulkumaran, S., Ng, G. I., Vicknesh, S., Wang, H., Ang, K. S., Kumar, C. M., et al. (2013). Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stack. Applied physics express, 6(1), 016501-. | Series/Report no.: | Applied physics express | Abstract: | We have demonstrated 0.15-µm-gate-length AlGaN/GaN high-electron-mobility transistors (HEMTs) with direct-current (DC) and microwave performances for the first time using a complementary metal–oxide–semiconductor (CMOS)-compatible non-gold metal stack. Si/Ta-based ohmic contact exhibited low contact resistance (Rc=0.24 Ω.mm) with smooth surface morphology. The fabricated GaN HEMTs exhibited gmmax=250 mS/mm, fT/fmax=39/39 GHz, B Vgd=90 V, and drain current collapse <10%. The device Johnson's figure of merit (J-FOM = fT × B Vgd) is in the range between 3.51 to 3.83 THz.V which are comparable to those of other reported GaN HEMTs on Si with a conventional III–V gold-based ohmic contact process. Our results demonstrate the feasibility of realizing high-performance submicron GaN-on-silicon HEMTs using a Si CMOS-compatible metal stack. | URI: | https://hdl.handle.net/10356/100489 http://hdl.handle.net/10220/25701 |
DOI: | 10.7567/APEX.6.016501 | Schools: | School of Electrical and Electronic Engineering | Research Centres: | Temasek Laboratories | Rights: | © 2013 The Japan Society of Applied Physics. This is the author created version of a work that has been peer reviewed and accepted for publication by Applied Physics Express, The Japan Society of Applied Physics. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.7567/APEX.6.016501]. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | TL Journal Articles |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Demonstration of Submicron-gate AlGaN_GaN High-Electron-Mobility Transistors on Silicon with CMOS-compatible Non-Gold Metal Stack.pdf | 201.52 kB | Adobe PDF | View/Open |
SCOPUSTM
Citations
10
56
Updated on Mar 23, 2024
Web of ScienceTM
Citations
10
45
Updated on Oct 25, 2023
Page view(s) 10
904
Updated on Mar 29, 2024
Download(s) 10
388
Updated on Mar 29, 2024
Google ScholarTM
Check
Altmetric
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.