dc.contributor.authorWang, Hong
dc.contributor.authorDu, Yuanmin
dc.contributor.authorLi, Yingtao
dc.contributor.authorZhu, Bowen
dc.contributor.authorLeow, Wan Ru
dc.contributor.authorLi, Yuangang
dc.contributor.authorPan, Jisheng
dc.contributor.authorWu, Tao
dc.contributor.authorChen, Xiaodong
dc.identifier.citationWang, H., Du, Y., Li, Y., Zhu, B., Leow, W. R., Li, Y., et al. (2015). Configurable resistive switching between memory and threshold characteristics for protein-based devices. Advanced functional materials, 25(25), 3825-3831.en_US
dc.description.abstractThe employ of natural biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and green electronics. Here, resistive switching (RS) devices based on naturally silk protein with configurable functionality are demonstrated. The RS type of the devices can be effectively and exactly controlled by controlling the compliance current in the set process. Memory RS can be triggered by a higher compliance current, while threshold RS can be triggered by a lower compliance current. Furthermore, two types of memory devices, working in random access and WORM modes, can be achieved with the RS effect. The results suggest that silk protein possesses the potential for sustainable electronics and data storage. In addition, this finding would provide important guidelines for the performance optimization of biomaterials based memory devices and the study of the underlying mechanism behind the RS effect arising from biomaterials.en_US
dc.relation.ispartofseriesAdvanced functional materialsen_US
dc.rights© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_US
dc.subjectDRNTU::Engineering::Materials::Functional materials
dc.titleConfigurable resistive switching between memory and threshold characteristics for protein-based devicesen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US

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