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|Title:||White-light-induced disruption of nanoscale conducting filament in hafnia||Authors:||Zhang, H. Z.
Yew, Kwang Sing
Ang, Diing Shenp
Bera, Milan Kumar
|Issue Date:||2015||Source:||Zhou, Y., Yew, K. S., Ang, D. S., Kawashima, T., Bera, M. K., Zhang, H. Z., et al. (2015). White-light-induced disruption of nanoscale conducting filament in hafnia. Applied Physics Letters, 107(7), 072107-.||Series/Report no.:||Applied Physics Letters||Abstract:||Nanoscale conducting filament, which forms the basis of the HfO2 resistive memory, is shown to exhibit a “negative photoconductivity” behavior, in that, electrical conduction through it can be disrupted upon white-light illumination. This behavior should be contrasted against the positive photoconductivity behavior commonly exhibited by oxides or perovskites having narrower bandgaps. The negative photoconductivity effect may be explained in terms of a photon-induced excitation of surrounding oxygen ions, which leads to migration and subsequent recombination with vacancies in the conducting filament. The finding suggests possible electrical-cum-optical applications for HfO2-based devices, whose functionality is limited to-date by electrical stimulation.||URI:||https://hdl.handle.net/10356/99990
|DOI:||http://dx.doi.org/10.1063/1.4929324||Rights:||© 2015 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The published version is available at: [http://dx.doi.org/10.1063/1.4929324]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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